HUASHUO HSBA4048

HUASHUO · FETs & Power MOSFETs · MPN HSBA4048

No reviews yet — be the first to review HUASHUO HSBA4048.

Specifications

Gate Charge(Qg)45nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)82pF
RDS(on)1.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.972nF

Technical details

N-Channel 40V 100A 125W PRPAK5x6-8L

Related FETs & Power MOSFETs