HUASHUO HSBA4018

HUASHUO · FETs & Power MOSFETs · MPN HSBA4018

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Specifications

Configuration-
Drain to Source Voltage40V
Gate Charge(Qg)110nC@10V
Output Capacitance(Coss)410pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation75W
RDS(on)3.8mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)344pF
Number1 N-channel
Input Capacitance(Ciss)6.15nF

Technical details

N-Channel 40V 120A 75W PRPAK5x6-8L

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