HUASHUO HSBA4016

HUASHUO · FETs & Power MOSFETs · MPN HSBA4016

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Specifications

Gate Charge(Qg)20nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation52.1W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 40V 75A 52.1W PRPAK5x6-8L

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