HUASHUO HSBA3903

HUASHUO · FETs & Power MOSFETs · MPN HSBA3903

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)7.2nC@4.5V
Current - Continuous Drain(Id)30A;24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation19W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)18mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)930pF

Technical details

N-Channel+P-Channel Array 30V 30A 24A 19W PRPAK5x6-8L

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