HUASHUO · FETs & Power MOSFETs · MPN HSBA35P15
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 120nC@10V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.65V |
| Pd - Power Dissipation | 80W |
| Reverse Transfer Capacitance (Crss@Vds) | 116pF |
| RDS(on) | 85mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 8.6nF |
P-Channel 150V 35A 80W PRPAK5x6-8L