HUASHUO · FETs & Power MOSFETs · MPN HSBA3496
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 9nC@4.5V;15nC@4.5V |
| Current - Continuous Drain(Id) | 50A;60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 22W |
| RDS(on) | 4.5mΩ@10V;3.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF;78pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.115nF;1.433nF |
N-Channel Array 30V 50A 60A 22W 22W PRPAK5x6-8L