HUASHUO · FETs & Power MOSFETs · MPN HSBA3482
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| Output Capacitance(Coss) | 380pF;1.259nF |
|---|---|
| Pd - Power Dissipation | 25W;35W |
| Configuration | Half-Bridge |
| Gate Charge(Qg) | 8.5nC@4.5V;26.1nC@4.5V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 58A;99A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 4mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 882pF;2.859nF |
30V 1.7V 4mΩ@10V 2 N-Channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS