HUASHUO · FETs & Power MOSFETs · MPN HSBA3480
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| Output Capacitance(Coss) | 265pF;368pF |
|---|---|
| Pd - Power Dissipation | 26W;34W |
| Configuration | Half-Bridge |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 4.8nC@10V;18nC@10V |
| Current - Continuous Drain(Id) | 40A;65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| RDS(on) | 6.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 575pF;891pF |
30V 1.8V 6.5mΩ@10V 2 N-Channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS