HUASHUO · FETs & Power MOSFETs · MPN HSBA3454
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| Configuration | Half-Bridge |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 9nC@4.5V |
| Output Capacitance(Coss) | 431pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 21W |
| RDS(on) | 6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.108nF |
30V 30A 1.8V 21W 6mΩ@10V 2 N-Channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS