HUASHUO · FETs & Power MOSFETs · MPN HSBA3430
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 29nC@10V;82nC@10V |
| Current - Continuous Drain(Id) | 78A;190A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 32W;62W |
| RDS(on) | 2.7mΩ@10V;0.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF;288pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.515nF;4.833nF |
N-Channel Array 30V 78A 190A 32W 62W PRPAK5x6-8L