HUASHUO · FETs & Power MOSFETs · MPN HSBA3331
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 3.45nF |
P-Channel 30V 60A 40W PRPAK5x6-8L