HUASHUO HSBA3202

HUASHUO · FETs & Power MOSFETs · MPN HSBA3202

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)4.5nC@4.5V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation42W
RDS(on)15mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)57pF
Number2 N-Channel
Input Capacitance(Ciss)491pF

Technical details

N-Channel Array 30V 35A 42W PRPAK5x6-8L

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