HUASHUO · FETs & Power MOSFETs · MPN HSBA3115
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| Gate Charge(Qg) | 33nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 59A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 52.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 421pF |
| RDS(on) | 9.8mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.448nF |
P-Channel 30V 59A 52.1W PRPAK5x6-8L