HUASHUO HSBA3105

HUASHUO · FETs & Power MOSFETs · MPN HSBA3105

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Specifications

Gate Charge(Qg)22nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)237pF
RDS(on)15mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.215nF

Technical details

P-Channel 30V 45A 45W PRPAK5x6-8L

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