HUASHUO · FETs & Power MOSFETs · MPN HSBA3103
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 12.5nC@4.5V |
| Output Capacitance(Coss) | 194pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 34.7W |
| RDS(on) | 14mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.345nF |
| Type | P-Channel |
30V 35A 1.6V 34.7W 14mΩ@10V 1 P-Channel P-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS