HUASHUO · FETs & Power MOSFETs · MPN HSBA3086
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 65nC@4.5V |
| Current - Continuous Drain(Id) | 230A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 0.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.427nF |
N-Channel 30V 230A 89W PRPAK5x6-8L