HUASHUO · FETs & Power MOSFETs · MPN HSBA3080
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 21nC@10V |
| Current - Continuous Drain(Id) | 110A |
| Output Capacitance(Coss) | 946pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 156pF |
| RDS(on) | 1.6mΩ@10V;2.7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.232nF |
| Type | N-Channel |
30V 110A 1.8V 52W 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS