HUASHUO HSBA3078

HUASHUO · FETs & Power MOSFETs · MPN HSBA3078

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)155nC@10V
Output Capacitance(Coss)3.93nF
Current - Continuous Drain(Id)330A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)728pF
RDS(on)0.48mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.987nF
TypeN-Channel

Technical details

30V 330A 1.7V 125W 0.48mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS

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