HUASHUO · FETs & Power MOSFETs · MPN HSBA3072C
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 26nC@4.5V |
| Output Capacitance(Coss) | 1.3nF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 229pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.86nF |
30V 150A 1.7V 55W 1.2mΩ@10V 1 N-channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS