HUASHUO · FETs & Power MOSFETs · MPN HSBA3072
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| Gate Charge(Qg) | 26nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 50W |
| RDS(on) | 1.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 229pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.86nF |
N-Channel 30V 120A 50W PRPAK5x6-8L