HUASHUO HSBA3068

HUASHUO · FETs & Power MOSFETs · MPN HSBA3068

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Specifications

Gate Charge(Qg)17nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)386pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation27W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)892pF
TypeN-Channel

Technical details

N-Channel 30V 60A 27W PRPAK5x6-8L

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