HUASHUO HSBA3056

HUASHUO · FETs & Power MOSFETs · MPN HSBA3056

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Specifications

Gate Charge(Qg)14.6nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)73A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.476nF

Technical details

N-Channel 30V 73A 38W PRPAK5x6-8L

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