HUASHUO HSBA3054

HUASHUO · FETs & Power MOSFETs · MPN HSBA3054

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation21W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)5.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.113nF

Technical details

N-Channel 30V 50A 21W PRPAK5x6-8L

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