HUASHUO HSBA3052

HUASHUO · FETs & Power MOSFETs · MPN HSBA3052

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Specifications

Gate Charge(Qg)8nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)52A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation24W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)6.9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)814pF

Technical details

N-Channel 30V 52A 24W PRPAK5x6-8L

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