HUASHUO · FETs & Power MOSFETs · MPN HSBA3048
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | 196pF |
| RDS(on) | 1.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.432nF |
N-Channel 30V 100A 63W PRPAK5x6-8L