HUASHUO HSBA3031

HUASHUO · FETs & Power MOSFETs · MPN HSBA3031

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)7.2mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.45nF

Technical details

P-Channel 30V 70A 90W PRPAK5x6-8L

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