HUASHUO · FETs & Power MOSFETs · MPN HSBA3016
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| Gate Charge(Qg) | 31.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 108A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | 315pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.075nF |
| Type | N-Channel |
N-Channel 30V 108A 69W PRPAK5x6-8L