HUASHUO · FETs & Power MOSFETs · MPN HSBA3014
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| Gate Charge(Qg) | 9.82nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 41.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 108pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 940pF |
30V 50A 1V 41.7W 12mΩ@10V 1 N-channel PRPAK(5x6) Single FETs, MOSFETs RoHS