HUASHUO · FETs & Power MOSFETs · MPN HSBA3006
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| Gate Charge(Qg) | 20nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 81A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 59W |
| RDS(on) | 5.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.295nF |
N-Channel 30V 81A 59W PRPAK5x6-8L