HUASHUO HSBA3004

HUASHUO · FETs & Power MOSFETs · MPN HSBA3004

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Specifications

Gate Charge(Qg)17.6nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)228pF
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation46W
Reverse Transfer Capacitance (Crss@Vds)183pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.844nF
TypeN-Channel

Technical details

N-Channel 30V 58A 46W PRPAK5x6-8L

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