HUASHUO · FETs & Power MOSFETs · MPN HSBA20N15S
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| Gate Charge(Qg) | 19nC@4.5V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 23A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 72.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 56mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.09nF |
N-Channel 150V 23A 72.6W PRPAK5x6-8L