HUASHUO · FETs & Power MOSFETs · MPN HSBA1641
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 10nC@4.5V;11.5nC@4.5V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V;1.7V |
| Pd - Power Dissipation | 32W |
| RDS(on) | 11mΩ@10V;21mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF;102pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.013nF;1.415nF |
N-Channel+P-Channel Array 40V 30A 32W 32W PRPAK5x6-8L