HUASHUO · FETs & Power MOSFETs · MPN HSBA1119
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 170nC@4.5V |
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 210A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 110W |
| RDS(on) | 1.6mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3nF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | P-Channel |
P-Channel 12V 210A 110W PRPAK5x6-8L