HUASHUO · FETs & Power MOSFETs · MPN HSBA100P03
No reviews yet — be the first to review HUASHUO HSBA100P03.
| Gate Charge(Qg) | 140nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 140W |
| Reverse Transfer Capacitance (Crss@Vds) | 500pF |
| RDS(on) | 3.3mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7.9nF |
P-Channel 30V 100A 140W PRPAK5x6-8L