HUASHUO · FETs & Power MOSFETs · MPN HSBA0903
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| Gate Charge(Qg) | 15nC@4.5V;19nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 8A;6.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 18W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF;29pF |
| RDS(on) | 200mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 66pF;1.229nF |
N-Channel+P-Channel Array 100V 8A 6.2A 18W PRPAK5x6-8L