HUASHUO · FETs & Power MOSFETs · MPN HSBA087N15
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 39nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 695pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.98nF |
| Type | N-Channel |
150V 100A 3.6V 150W 7.5mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS