HUASHUO · FETs & Power MOSFETs · MPN HSBA075N04
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| Gate Charge(Qg) | 125nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 255A |
| Output Capacitance(Coss) | 2.622nF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 152pF |
| RDS(on) | 0.75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.309nF |
| Type | N-Channel |
40V 255A 1.5V 200W 0.75mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS