HUASHUO HSBA0715

HUASHUO · FETs & Power MOSFETs · MPN HSBA0715

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Specifications

Gate Charge(Qg)68nC@4.5V
Drain to Source Voltage150V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation187W
RDS(on)8.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)36pF
Number1 N-channel
Input Capacitance(Ciss)4.59nF
TypeN-Channel

Technical details

N-Channel 150V 90A 187W PRPAK5x6-8L

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