HUASHUO · FETs & Power MOSFETs · MPN HSBA045N10
No reviews yet — be the first to review HUASHUO HSBA045N10.
| Gate Charge(Qg) | 46nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 2.925nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 170W |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.925nF |
| Type | N-Channel |
N-Channel 100V 120A 170W PRPAK5x6-8L