HUASHUO · FETs & Power MOSFETs · MPN HSBA0256
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 165pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 20mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 851pF |
| Type | N-Channel |
N-Channel Array 100V 30A 30W PRPAK5x6-8L