HUASHUO · FETs & Power MOSFETs · MPN HSBA0204
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| Gate Charge(Qg) | 19.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 9.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 21W |
| Reverse Transfer Capacitance (Crss@Vds) | 37.4pF |
| RDS(on) | 120mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.535nF |
N-Channel Array 100V 9.3A 21W PRPAK5x6-8L