HUASHUO HSBA0195A

HUASHUO · FETs & Power MOSFETs · MPN HSBA0195A

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Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.423nF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation105W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)20mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.25nF
TypeP-Channel

Technical details

P-Channel 100V 60A 105W PRPAK5x6-8L

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