HUASHUO · FETs & Power MOSFETs · MPN HSBA0139
No reviews yet — be the first to review HUASHUO HSBA0139.
| Gate Charge(Qg) | 92nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 223pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF |
| RDS(on) | 42mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.516nF |
| Type | P-Channel |
P-Channel 100V 30A 83W PRPAK5x6-8L