HUASHUO · FETs & Power MOSFETs · MPN HSBA0117
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| Gate Charge(Qg) | 150nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 25A |
| Output Capacitance(Coss) | 155pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 60W |
| RDS(on) | 40mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 148pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 8.476nF |
| Type | P-Channel |
100V 25A 1.7V 60W 40mΩ@10V 1 P-Channel P-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS