HUASHUO · FETs & Power MOSFETs · MPN HSBA0096
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 26nC@10V |
| Output Capacitance(Coss) | 495pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 65W |
| RDS(on) | 14mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.41nF |
N-Channel 100V 70A 65W PRPAK5x6-8L