HUASHUO · FETs & Power MOSFETs · MPN HSBA0084A
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| Gate Charge(Qg) | 112nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.621nF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 220W |
| RDS(on) | 2.7mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 64pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.425nF |
| Type | N-Channel |
100V 150A 3V 220W 2.7mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS