HUASHUO HSBA0072

HUASHUO · FETs & Power MOSFETs · MPN HSBA0072

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)796pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation92W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.995nF
TypeN-Channel

Technical details

100V 90A 1.6V 92W 5mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS

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