HUASHUO · FETs & Power MOSFETs · MPN HSBA0056
No reviews yet — be the first to review HUASHUO HSBA0056.
| Gate Charge(Qg) | 17.9nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 37.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 15.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 849pF |
N-Channel 100V 32A 37.9W PRPAK5x6-8L