HUASHUO HSBA0048

HUASHUO · FETs & Power MOSFETs · MPN HSBA0048

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)78A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation108W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)6.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.32nF

Technical details

N-Channel 100V 78A 108W PRPAK5x6-8L

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