HUASHUO AO3407A

HUASHUO · FETs & Power MOSFETs · MPN AO3407A

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Specifications

Gate Charge(Qg)7.3nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)115pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation1.32W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)60mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)650pF
TypeP-Channel

Technical details

P-Channel 30V 4A 1.32W Surface Mount SOT-23

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